1. Cut the required purity vanadium ingot according to the target size using a horizontal sawing machine, preheat at 450-500℃, then forge, and control the total deformation rate of forging to 70-80%;
2. Anneal the forged vanadium ingot at a temperature of 400-500℃ and a holding time of 60-120min, and then cool it by air cooling;
3. Roll the annealed vanadium ingot, and control the pressing amount of each pass to 0.5-1mm, and control the total deformation to 70-80%, until the vanadium target blank of the required diameter and thickness is obtained;
4.Anneal the rolled vanadium target blank again at a temperature of 450-550℃ and a holding time of 90-150min. After annealing again, water cool it to obtain the required high-purity vanadium target blank.
The vanadium target blank prepared in this way not only has a uniform internal structure, but also has the advantage of fine grains.
The target material is required to be of high purity, less impurities, uniform chemical composition, no segregation, no pores, uniform grain structure, and grain size of micrometer to millimeter level. The grain size difference in a single sputtering target is required to be as small as possible. In this way, it is not easy to produce discharge phenomenon in magnetron sputtering, and the magnetron sputtering film is uniform.
Application of vanadium target
Used in the fields of solar energy, flat panel displays, electronics and semiconductors, such as integrated circuits, backplane metallization, optoelectronics and other applications.
