Titanium Target

Overview of titanium (Ti) targets

Titanium target material, titanium element symbol Ti, atomic number 22, density 4.454g/Cm3, physical properties: melting point 1668℃, boiling point 3262℃, specific heat capacity 0.52 (J / (Kg-K), heat of evaporation 421 (KJ/Mol), heat of melting 15.45 (KJ/Mol), electrical conductivity 0.0234 (106/Cm). Due to the high cost of high-purity titanium, the application area is extremely limited, mainly used as semiconductor materials and gas-absorbing materials in ultra-high vacuum devices. High-purity titanium is gas-absorbing, especially hydrogen, CH4, and Co2 gases, so it can be widely used in high vacuum and ultra-high vacuum systems. When high purity titanium sputtering is used to make the line network of LSI, VLSI, and ULSI, these integrated parts can be made extra light, thin, small in size and dense in line. High purity titanium targets can also be used as barrier layer metal materials.

We produce high purity sputtered titanium targets, whose most important benefit is to obtain films with excellent electrical conductivity and particle minimization during physical vapor deposition. Analytical methods used: 1. metal element analysis using GDMS or ICP-OES; 2. gas element analysis using LECO.

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