
Tungsten Sputtering Target
2.Product Name:Tungsten Sputtering Target
3.Element Symbol:W
4.Purity:3N5
5.Shape:Planar target, Rotary target
The high purity tungsten metal used to make tungsten sputtering targets is typically brittle and challenging to work with. Tungsten can maintain its hardness (which is greater than that of many steels) and has enough ductility to make it simple to process if it is formed into a very pure material. It goes through forging, stretching, or extrusion processes. Typically, sintering is also used to create tungsten objects.
Tungsten has the strongest tensile strength, lowest vapor pressure (at temperatures exceeding 1650 °C, 3000 °F), and highest melting point of all metals in pure form (3422 °C, 6192 °F). Of all pure metals, tungsten has the least thermal expansion coefficient. Strong covalent connections created by the 5d electrons between tungsten atoms give tungsten its low thermal expansion, high melting point, and great tensile strength. Steel becomes significantly more durable when tungsten is alloyed with it in modest amounts.
The production of tungsten sputtering targets in a variety of forms and purity is a specialty of Yusheng Metal, which is mostly used in semi-conductive & micro-electronics. Due to having the highest melting point of all metals, tungsten layers, which are a part of the thin-film transistors used in TFT-LCD screens, are incredibly stable in high temperature environments. Our targets have higher density, lower average particle size, and higher purity as a result of our unique forming techniques, allowing you to take advantage of a quicker process due to higher sputtering speeds and produce very homogenous tungsten layers.
Our flexible production technique allows us to modify the microstructure to produce the required result. The user can profit from constant erosion rates and homogeneous layers if the grains of the sputtering target are uniformly aligned. 100 m is the typical grain size.
A metal sputtering target must have excellent chemical purity because this will result in films with greater electrical conductivity and reduced particle formation during the PVD process. The typical Certificate of Analysis for a 3N5 tungsten target is provided below.
Analytical Techniques:
1. GDMS and ICP-OES were used to examine metallic elements.
2. LECO examined the components of gas.

Material preparation, sintering, and chemical analysis are the steps in the preparation of the tungsten sputtering target.Rolling, annalizing, metallographic inspection, manufacturing, three-dimensional inspection, cleaning, final inspection, packaging, and shipment
Tungsten sputtering target and its technique of preparation
Purity over 99.95%, 2.2–2.6 mm, cold isostatic pressing for 5–10 minutes, 2300–2400 °C, 8–12 hours of intermediate frequency induction sintering, and 1450–1500 °C tungsten powder mixture. It is hot-rolled to a thickness of 5–15mm by numerous passes, with a total deformation of more than 60%, following annealing at 1550°C for 90–180 minutes. After an annealing period of 90 to 150 minutes at 1300 to 1400 °C, mechanical processing is performed. The final tungsten target material is not only good in performance but also reasonably easy to process and does not require expensive equipment. The amount of mechanical processing on the surface is about 1.5mm.
Other tungsten target alloys are available.
Targets made of tungsten titanium, tungsten titanium alloy, tungsten copper, tungsten manganese, tungsten nickel, etc.
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