High-Purity Tantalum Sputtering Target

In recent years, with the rapid development of the electronic information industry, sputtering targets for integrated circuits have also been greatly developed. Among the metal targets used to manufacture semiconductor chips, common sputtering targets are non-ferrous metals such as Ta Ti Al Co and Cu. Among them, the largest amount of metal sputtering targets for integrated circuit manufacturing is ultra-high purity aluminum (>99.999%) and ultra-high purity aluminum alloy targets, and the ultra-high purity titanium target used for sputtering barrier layer is ultra-high purity titanium target. In LSIs, metal interconnect electromigration is one of the main failure mechanisms. At high current density, aluminum wire is prone to electromigration, resulting in the formation of protrusions and voids in the aluminum interconnect film, thereby reducing the operating efficiency and reliability of integrated circuits. The resistivity of Cu is about 35% lower than that of Al, and the resistance to electromigration is also strong; And with the high scale development of integrated circuits, the degree of integration is getting higher and higher, and higher technical requirements are put forward for the manufacture of sputtering targets for interline and barrier layers, in the deep submicron process (≤018um), copper will gradually replace aluminum as the material for metallized wiring on silicon wafers, ultra-high purity copper targets can be more used, and the corresponding sputtering of the male barrier is a high-purity tantalum target.

With the increase in the amount of high-purity tantalum target as a sputter barrier coating material, its requirements for target performance are also getting higher and higher, such as the larger and larger sputtering target size, the finer and more uniform the microstructure, etc. Therefore, the research on the preparation process of sputtering targets has gradually attracted attention. At present, the preparation process of high-purity tantalum sputtering target mainly includes smelting and casting method and powder metallurgy method:

1.Preparation of high-purity sputtering target by smelting and casting method

The smelting and casting method is currently the main method for preparing tantalum sputtering targets, generally the tantalum raw materials are smelted (electron beam or arc, plasma melting, etc.) forging, and the obtained ingots or blanks are repeatedly hot forged, annealed, and then rolled, annealed, and finished into the target. The ingots or blanks are hot forged to destroy the casting structure, so that the pores or segregation diffuse, disappear, and then recrystallize them by annealing, thereby improving the densification and strength of the tissue.

In order to ensure that the target can sputter high-quality films, there are generally high requirements for tantalum sputtering targets, and the higher the purity of the target material, the better the film quality.

2. Preparation of high-purity tantalum sputtering target by powder metallurgy

The methods for preparing high-purity tantalum targets by powder metallurgy mainly include hot pressing, hot isostatic pressing, cold isostatic vacuum sintering, etc. At present, the more common powder metallurgy preparation tantalum sputtering target method is mainly hot pressing and hot isostatic pressing method, by nitriding the surface of the metal powder, tantalum powder with oxygen content below 300mg/kg and nitrogen content below 10mg/kg can be obtained, and then loaded into the mold, and then cold-pressed forming and hot isostatic pressing molding or other sintering methods, the purity of 99.95% or more, the average grain size is less than 50um, or even 10um, the texture is random, and texture uniform tantalum target along the surface and thickness of the target.

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